InxGa1−xAs (x=0.25–0.35) grown at low temperature

Journal of Electronic Materials

Authors: J. M. Ballingall, P. Ho, John Mazurowski, L. F. Lester, K. C. Hwang, J. A. Sutliff, Sandeep Gupta, J.F. Whitaker

DOI: https://doi.org/10.1007/bf02650001

Publish Year: 1993