Optical and structural properties of GaN epitaxial layers on LiAlO2 substrates and their correlation with basal-plane stacking faults

Journal of Crystal Growth

Authors: E. V. Lutsenko, M. V. Rzheutski, В. Н. Павловский, G. P. Yablonskii, Mohammad Alanzi, A. Hamidalddin, Ahmed Y. Alyamani, C. Mauder, H. Kalisch, B. Reuters, M. Heuken, Andrei Vescan, G. Naresh‐Kumar, C. Trager‐Cowan

DOI: https://doi.org/10.1016/j.jcrysgro.2015.10.036

Publish Year: 2015