BSc Physics 2010.
Working in R&D lab for the past 14 years. I have extensive research experience even though I only have a BSc degree. Co-authored several research papers.
The electrical and optical properties of InGaN-GaN light-emitting diodes (LEDs) emitting in the 400-500-nm range and having a v-shaped quantum well (VSQW) and a u-shaped quantum well (USQW) are numerically investigated using APSYS simulation program. The simulation results showed that the devices containing VSQW have superior performance in terms of optical power and internal quantum efficiency droop compared to those with USQW. The optical power of the LEDs containing USQW increases gradually and reaches a maximum at 460 nm; however, the optical power of the LEDs with VSQW improves gradually, and the maximum is obtained in a window from 420 to 436 nm as a result of radiative recombination enhancement. The simulation results suggest that the higher performance of the VSQW is due to piezoelectric field reduction and an enhancement of electron and hole wave functions overlap.
The room temperature laser generation in the yellow – green () spectral range has been demonstrated under optical pumping by a pulsed nitrogen laser of quantum dot heterostructures. The maximum achieved laser wavelength was as high as at a laser cavity length of . High values of both the output pulsed power (up to ) and the external differential quantum efficiency () were obtained at a cavity length of . Both a high quality of the laser heterostructure and a low lasing threshold () make it possible to use a pulsed InGaN laser diode as a pump source. A laser microchip converter based on this heterostructure has demonstrated a maximum output pulse power of at . The microchip converter was placed in a standard TO-18 ( in diameter) laser diode package.
